SiC MOSFET ASC100N1200MDS 碳化硅

分類:1200V 566 0

Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased power density, reduced EMI, and
reduced system size.

Features
? High Speed Switching with Low Capacitances
? High Blocking Voltage with Low RDS(on)
? Fast and reliable body diode
? Easy to parallel and simple to drive
? Superior avalanche ruggedness
? ROHS Compliant, Halogen free
? Isolated voltage to 2500 V

Application
? PV inverter, converter, and industrial motor drives
? Smart grid transmission and distribution
? Induction heating and welding
? Power supply and distribution
? H/EV powertrain and EV charger

 

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